Majority carrier photodetector

Details Majority carrier photodetector Majority carrier photodetector

1981-04-24

1984-09-11

Edlow, Martin H.

357 16, 357 58, H01L 29161, H01L 2714, H01L 2912

Patent

active

044713703

ABSTRACT:
A majority carrier photodetector has high sensitivity and fast response times. The photodetector comprises a thin highly doped layer surrounded on either side by two nominally undoped layers which are completely depleted at thermal equilibrium.

REFERENCES:
patent: 4008485 (1977-02-01), Miyoshi et al.
patent: 4254429 (1981-03-01), Yamazaki
patent: 4353081 (1982-10-01), Allyn et al.
patent: 4410902 (1983-10-01), Malik
R. A. Milano et al., "Al.sub.0.5 Ga.sub.0.5 As-GaAs Heterojunction Phototransistors Grown by Metalorganic Chemical Vapor Deposition", Applied Physics Letters, vol. 34, (1979), pp. 562-564.
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H. J. Hovel, "Graded Bandgap Heterojunction Bipolar Transistor", IBM Technical Disclosure Bulletin, vol. 22, (1980), p. 3875.
D. L. Rogers, "Heterojunction Phototransistor", IBM Technical Disclosure Bulletin, vol. 23, (1981), p. 4763.
R. J. Malik et al., "Planar-doped Barriers in GaAs by Molecular Beam Epitaxy", Electronics Letters, vol. 16, (1980), pp. 836-838.
J. C. Campbell et al., "InP/InGaAs Heterojunction Bipolar Phototransistors with Improved Sensitivity", International Electron Devices Meeting Technical Digest, Washington, D.C., (1980), pp. 526-529.
J. C. Campbell et al., "InP/InGaAs Heterojunction Phototransistors", IEEE Journal of Quantum Electronics, vol. QE-17, (1981), pp. 264-269.
J. M. Shannon, "A Majority-Carrier Camel Diode", Applied Physics Letters, vol. 35, (1979), pp. 63-65.

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