Insulated gate transistor array

Details Insulated gate transistor array Insulated gate transistor array

1985-12-13

1988-10-18

James, Andrew J.

357 238, 357 43, 357 65, H01L 2978, H01L 2710

Patent

active

047791233

ABSTRACT:
An insulated gate transistor (70) modified to increase its latching current density. On one side of gate (22), a high conductivity collector well (76) is provided to divert current which would otherwise flow through collector well (24) in a critical path (50) along source-collector junction (27), tending to forward bias the junction and cause the transistor to latch.

REFERENCES:
patent: 3484796 (1969-12-01), Schuller
patent: 4344081 (1982-08-01), Pao et al.
patent: 4364073 (1982-12-01), Becke et al.
patent: 4495513 (1985-01-01), Descamps
patent: 4584593 (1986-04-01), Tihanyi
patent: 4631564 (1986-12-01), Neilson et al.
patent: 4682195 (1987-07-01), Yilmaz
patent: 4689647 (1987-08-01), Nakagawa et al.
A. Nakagawa, "Non-Latch-Up 12000V 75A Bipolar-Mode MOSFET with: Large ASO", IDEM 84, pp. 860-861, Dec. 11, 1984, Wash. D.C., 16.8.

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