Method for passivating aluminum layers on semiconductive devices

Details Method for passivating aluminum layers on semiconductive devices Method for passivating aluminum layers on semiconductive devices

1977-02-28

1978-05-16

Hoffman, James R.

Metal treatment

Compositions

Heat treating

148 63, 148 315, 427 88, C23F 706, C23F 1700

Patent

active

040897095

ABSTRACT:
An aluminum layer such as an intraconnect on an integrated circuit semiconductive device is passivated by oxidizing the aluminum layer to form a thin layer of amorphous alumina thereon. The alumina layer is coated with a surface active agent to form a hydrophobic surface on the aluminum oxide to inhibit the creation and growth of ALOOH on the oxide layer. The hydrophobic surface is coated with a conventional passivating material such as silicon dioxide, epoxy or the like.

REFERENCES:
patent: 3622843 (1971-11-01), Vermilyea

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