EEPROM memory system having selectable programming voltage for l

Details EEPROM memory system having selectable programming voltage for l EEPROM memory system having selectable programming voltage for l

1991-05-23

1992-10-06

Bowler, Alyssa H.

Static information storage and retrieval

Floating gate

Particular biasing

365104, 36523006, 36518901, G11C 700, G11C 1602, G11C 1606

Patent

active

051538547

ABSTRACT:
A memory system for the non-volatile storage of digital information. The digital storage element is a semiconductor memory cell which is electrically erasable, readable, and programmable. There is a low voltage read mode provided to decrease system power requirements.

REFERENCES:
patent: 4775958 (1988-10-01), Hashimoto
patent: 4829203 (1989-05-01), Ashmore, Jr.
patent: 4855955 (1989-08-01), Cioaca
patent: 4858187 (1989-08-01), Schreck
patent: 4896298 (1990-01-01), Kowalski

Affiliated with

Also associated with

Rating

EEPROM memory system having selectable programming voltage for l does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with EEPROM memory system having selectable programming voltage for l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EEPROM memory system having selectable programming voltage for l will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1195761