Method of making a bipolar semiconductor device

Details Method of making a bipolar semiconductor device Method of making a bipolar semiconductor device

1988-04-04

1989-04-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 41, 437 89, 437 90, 437 99, 437228, 357 34, 357 59, H01L 3136, H01L 2138

Patent

active

048247995

ABSTRACT:
An n.sup.+ -type buried layer is formed in the surface region of a p-type semiconductor substrate. Isulating films are formed on the semiconductor substrate. The insulating films have openings located above the buried layer. An n-type monocrystalline silicon layer is formed in one opening located above the buried layer. A base region is formed in the monocrystalline silicon layer. The base region defines a remaining portion of the monocrystalline silicon layer as a collector region. An emitter region is formed in the base region. A polycrystalline silicon layer is buried in the insulating films to have ohmic contact with the base region and serve as a portion of a base connection region. The polycrystalline silicon layer contains a p-type impurity and serves as an impurity diffusion source for the formation of an external base of the base region. An MoSi.sub.2 layer is buried in the insulating films to have ohmic contact with the polycrystalline silicon layer and to serve as a portion of the base connection region, thereby reducing the base resistance. A conductive layer for connection with a collector is formed in another opening.

REFERENCES:
patent: 4276557 (1981-06-01), Levinstein et al.
patent: 4338618 (1982-07-01), Nishizawa
patent: 4433470 (1984-02-01), Kameyama et al.
patent: 4495512 (1985-01-01), Isaac et al.
patent: 4512075 (1985-04-01), Vora
patent: 4663831 (1987-05-01), Birrittella et al.
patent: 4706378 (1987-11-01), Havemann
patent: 4764801 (1988-08-01), McLaughlin et al.
IBM Technical Disclosure Bulletin, vol. 25, No. 7B, Dec. 1982, pp. 4011-4015, "Reducing the Device Size of Polysilicon Base Transistor" by C. G. Jarmbotkar.
Nakashiba et al., "An Advanced PSA Technology for High-Speed Bipolar LSI," IEEE Transactions on Electron Devices, vol. ED-27, No. 8, Aug. 1980.
Wiedmann, "Status and Trends of I2L/MTL Technology," IEDM Digest Technical Papers, pp. 47-50, 1983.

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