Method of introducing impurity species into a semiconductor stru

Details Method of introducing impurity species into a semiconductor stru Method of introducing impurity species into a semiconductor stru

1987-11-05

1989-04-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG75, 148DIG34, 148DIG37, 148DIG59, 148DIG97, 148DIG110, 156613, 437 82, 437 98, 437110, 437132, 437161, 437951, 437987, H01L 21265, H01L 21203

Patent

active

048247987

ABSTRACT:
A thin film bilayer composite source comprises a deposited impurity source layer, e.g. Si or Sb, heavily doped with a diffusion enabling agent, e.g. As, and capped with a passivating layer, e.g. Si.sub.3 N.sub.4, SiO.sub.2, AlN or SiO.sub.x N.sub.y. In a preferred embodiment, a thin film bilayer composite source comprises a Si layer on the surface of said structure vapor deposited at a temperature in excess of 500.degree. C. in the presence of a source of As to hevily dope the layer in the range of 5%-20% atomic weight and a thin cap layer of Si.sub.3 N.sub.4 deposited on the Si layer at a temperature in excess of 500.degree. C. having a thickness only sufficient to prevent the outdiffusion of Ga and As, which thickness may be about 400 .ANG.-700 .ANG.. An important aspect of the employment of this bilayer composite source as a diffusion source for III-V structures is that the composite source is initially deposited at high temperatures, above 500.degree.0 C., i.e., at temperatures that are into the range of annealing temperature, e.g. about 500.degree.-900.degree. C., preferably 700.degree.-850.degree. C., so that cracking due to thermal strain or compressive stress will not occur on subsequent high temperature annealing thereby providing reproducible, uniform impurity diffusion into III-V structures. A particular application of bilayer composite source is in impurity induced disordering (IID).

REFERENCES:
patent: 4378255 (1983-03-01), Holonyak, Jr. et al.
patent: 4594603 (1986-06-01), Holonyak, Jr.
patent: 4615766 (1986-10-01), Jackson et al.
patent: 4634474 (1987-01-01), Camlibel et al.
patent: 4639275 (1987-01-01), Holonyak, Jr.
patent: 4654090 (1987-03-01), Burnham et al.
Kasahara et al., "The Effect of Stress on the Redistribution of Implanted Impurities in GaAs", J. Electrochem. Soc., vol. 130, No. 11, Nov. 1983, pp. 2275-2279.
Bustarret et al., "Residual Disorder in Low-Temperature Polycrystalline Silicon", J. Elect. Mat., vol. 13, No. 4, 1984, pp. 673-687.
Epler et al., "Laser Induced Disordering of GaAs--AlGaAs Superlattice and Incorporation of Si Impurity", Appl. Phys. Lett., 49(21), 24 Nov. 1986, pp. 1447-1449.
Morin et al., "Polycrystalline Silicon by Glow Discharge Technique", Appl. Phys. Lett., 35(9), 1 Nov. 1979, pp. 686-687.
Ghandhi, VLSI Fabriction Principles; John Wiley & Sons, New York, NY, 1983, pp. 427-429.
G. R. Antell et al., "The Diffusion of Silicon in Gallium Arsenide", Solid-State Electronics, vol. 8, pp. 943-946 (1965), Pergamon Press, Gt. Brit.
E. Omura et al., "Closed-Tube Diffusion of Silicon in GaAs from Sputtered Silicon Film", Electronic Letters, vol. 22(9), pp. 496-498 (Apr. 24, 1986).
T. Onuma et al., "Study of Encapsulants for Annealing Si-Implanted GaAs", Jornal of Electrochemical Society, vol. 129(4), pp. 837-840 (Apr., 1982).
M. E. Greiner et al., "Diffusion of Silicon in Gallium Aresnide Using Rapid Thermal Processing: Experiment and Model", Applied Physics Letters, vol. 44(8), pp. 750-752 (Apr. 15, 1984).
K. L. Kavanagh et al., "Silicon Diffusion at Polycrystalline-Si/GaAs Interfaces, Applied Physics Letters", vol. 47(11), pp. 1208-1210 (Dec. 1, 1985).
K. L. Kavanagh et al., "The Polycrystalline-Si Contact to GaAS", Journal of the Electrochemical Society, vol. 133(6), pp. 1176-1179 (Jun, 1986).
K. Meehan et al., "Disorder of an Al.sub.x Ga.sub.1-x As--GaAs Superlattice by Donor Diffusion", Applied Physics Letters, vol. 45(5), pp. 549-551 (Sep. 1, 1984).
R. L. Thornton et al., "Highly Efficent, Long Lived AlGaAs Lasers Fabricated by Silicon Impurity Induced Disordering", Applied Physics Letters, vol. 49(3), pp. 133--134 (Jul. 21, 1986).
E. Omura et al., "Silicon Diffusion Into Al.sub.x Ga.sub.1-x As (x=0-0.4) From a Sputtered Silicon Film", Applied Physics Letters, vol. 50(5), pp. 265-266 (Feb. 2, 1987).
Tae Earn Shim et al, "Si Film As An Annealing Cap for Si-Implanted GaAs", Applied Physics Letters, vol. 48(10), pp. 641-643, (Mar. 10, 1986).
R. L. Thornton et al., "Low Threshold Planar Buried Hetrostructure Lasers Fabricated By Impurity-Induced Disordering", Applied Physics Letters, vol. 47(12), pp. 1239-1241 (Dec. 15, 1985).

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