Method of making DRAM cell with trench capacitor

Details Method of making DRAM cell with trench capacitor Method of making DRAM cell with trench capacitor

1987-11-12

1989-04-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 38, 437 48, 437 60, 437203, 437 52, 437162, 437249, 437919, H01L 21265, H01L 2710, H01L 21302

Patent

active

048247936

ABSTRACT:
A dRAM cell and array of cells, together with a method of fabrication, are disclosed wherein the cell includes one field effect transistor and one storage capacitor with both the transistor and the capacitor formed in a trench in a substrate. The transistor source, channel, and drain and one capacitor plate are formed essentially vertically in the sidewalls of the trench, and the gate and other capacitor plate are formed in two regions of material inserted into the trench. Signal charge is stored on the material inserted into the trench. In preferred embodiments word lines on the substrate surface connect to the upper of the inserted regions which forms the gate, and bit lines on the substrate surface are formed as diffusions in the substrate which also form the drains. The trenches and cells are formed at the crossings of bit lines and word lines; the bit lines and the word lines form perpendicular sets of parallel lines.

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