High voltage MOSFET with doped ring structure

Details High voltage MOSFET with doped ring structure High voltage MOSFET with doped ring structure

1979-08-08

1981-09-08

Wojciechowicz, Edward J.

357 23, 357 24, 357 45, 357 50, 357 51, 357 52, 357 53, 357 55, 357 56, 357 68, 357 91, H01L 2702

Patent

active

042888034

ABSTRACT:
Integrated monlithic arrays of high voltage metal oxide semiconductor field effect transistors having closed geometry grounded peripheries for interdevice isolation are able to function as drivers that may be switched on and off. The HVMOSFET included DMOS-like structures with separate channel and drift regions, closed geometry configurations with center drains, and split oxide topography having relatively thin oxide under a field plate and over a drift region for surface depletion and high voltage inversion preclusion respectfully. The infra described HVMOSFET includes doping the areas between the field plates, gates and drain electrodes for the purpose of minimizing the problem of series resistance inherent in HVMOSFET'S with spatial gaps between the surface electrodes.

REFERENCES:
patent: 3909320 (1975-09-01), Cauge et al.
patent: 4017883 (1977-04-01), Ho et al.

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