Semiconductor device with low defect density oxide

Details Semiconductor device with low defect density oxide Semiconductor device with low defect density oxide

1990-05-25

1992-10-06

Carroll, J.

357 2315, 357 59, H01L 2978, H01L 2934, H01L 2904

Patent

active

051537010

ABSTRACT:
Low defect density oxides suitable for use as thin gate oxides or in charge storage capacitors are described. First and second layers are formed on a substrate with misaligned defect structures. A third layer is then grown by diffusing a species through the first and second layers to the substrate. The species reacts with the substrate. The low defect density results from the misaligned defect structure of the first and second layers. In one embodiment, the first and second layers are grown and deposited oxides, respectively. The third layer is grown by diffusing oxygen through the first two layers and the interface between the first and second layers acts as a sink trapping defects. The oxide silicon interface has desirable characteristics because the oxide grows in near equilibrium conditions.

REFERENCES:
patent: 4140548 (1979-02-01), Zimmer
patent: 4214919 (1980-07-01), Young
patent: 4305200 (1981-12-01), Fu et al.
patent: 4518630 (1985-08-01), Grasser
patent: 4794571 (1988-12-01), Uchidee
B. E. Deal, "Historical Perspectives of Silicon Oxidation", The Physics and Chemistry of SiO.sub.2 and the Si-SiO.sub.2 Interface, edited by C. Helms et al. (1988) pp. 5-15.
R. Dorn et al., "The Adsorption of Oxygen on Silicon (III) Surfaces, II", Surface Science, 42 (1974) pp. 583 to 594.
D. R. Ulrich "Sol-Gel Processing", Chem. Tech. (Apr. 1988) pp. 242-249.
S. M. Sze, Semiconductor Devices Physics and Technology, John Wiley & Sons (1985) p. 350.
"Controlled Nitridation of SiO.sub.2 for the Formation of Gate Insulators in FET Devices", IBM Technical Disclosure Bulletin, vol. 28, No. 6 (Nov. 1985) pp. 2665-2666.
S. M. Sze, Semiconductor Divices, Physics and Technology, John Wiley & Sons (1985) p. 345.

Affiliated with

Also associated with

Rating

Semiconductor device with low defect density oxide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with low defect density oxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with low defect density oxide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1193993