Semiconductor gate-controlled high-power capability bipolar devi

Details Semiconductor gate-controlled high-power capability bipolar devi Semiconductor gate-controlled high-power capability bipolar devi

Filed on

1990-09-10

Date issued

1992-10-06

Examiner

Mintel, William

Other Related Categories

357 22, 357 39, 357 52, 357 55, 357 37, 357 36, H01L 2974

Type

Patent

Status

active

Patent number

051536951

Description

ABSTRACT:
A gate-turn-off power semiconductor device of the GTO or FCTh type, having a control zone of alternately arranged finely subdivided cathode fingers and gate trenches, wherein the gate trenches are constructed as narrow deep slots, preferably by a crystal-direction-selective wet chemical etching process, while the original substrate surface is retained in the remaining area of the semiconductor substrate. Compared with the conventional "recessed-gate" construction, this quasi-planar construction offers a number of advantages in the electrical behavior, in the integration of auxiliary functions and in the production.

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D. Kendall, "On Etching Very Narrow Grooves in Silicon", Apply, Phys. Lett., vol. 26 #4, Feb. 15, 1975, pp. 195-197.

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