Method of making semiconductor device

Details Method of making semiconductor device Method of making semiconductor device

1994-03-01

1994-12-13

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437 99, H01L 2170

Patent

active

053729668

ABSTRACT:
In formation of a DRAM, a silicon nitride film is used as a mask to simultaneously expose a semiconductor substrate serving as an active region where an MOSFET is formed and a portion of the periphery of a trench. Therefore, even if the alignment offset of a resist pattern occurs, an interval between adjacent memory cells does not change. The interval between the adjacent memory cells is constantly the same as that when no alignment offset of the resist patter occurs. That is, only an n-type diffusion layer of the memory cell formed at a position adjacent to the trench comes close to source and drain regions of the adjacent memory cell.

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patent: 4916524 (1990-04-01), Teng et al.
patent: 4927779 (1990-03-01), Dhong et al.
patent: 4988637 (1991-01-01), Dhong et al.
patent: 5075248 (1991-12-01), Yoon et al.
patent: 5102819 (1992-04-01), Matsushita et al.
patent: 5302542 (1994-04-01), Kishi et al.

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