Semiconductor device and method for producing the same

Details Semiconductor device and method for producing the same Semiconductor device and method for producing the same

1990-07-17

1992-01-21

James, Andrew J.

357 59, 357 71, H01L 2702

Patent

active

050831836

ABSTRACT:
A resistor for a semiconductor device includes a thin film resistor layer sandwiched between thin film silicon layers. A thin film silicon oxide layer formed on the upper silicon layer prevents oxidation of the upper silicon layer, so that the upper silicon layer serves as a stopper for subsequent etching of the device to provide contacts for the resistor.

REFERENCES:
patent: 4948747 (1990-08-01), Pfiester
patent: 4961103 (1990-10-01), Saitoh et al.

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