Semiconductor device having an isolation oxide film

Details Semiconductor device having an isolation oxide film Semiconductor device having an isolation oxide film

1988-11-03

1990-09-11

Hille, Rolf

357 236, 357 55, H01L 2712

Patent

active

049566920

ABSTRACT:
Two trenches are formed at a predetermined distance on a main surface of a semiconductor substrate. An oxide film and a nitride film are successively formed on the main surface of the semiconductor including the inner surfaces of the trenches. After a resist is formed over the whole surface including the inner surfaces of the trenches, the resist is patterned to expose a portion of the nitride film on a side surface of each trench. The exposed portions of the nitride film are removed by using the patterned resist as a mask and thermal oxidation is applied. Then, an isolation oxide film is formed on a region between the trenches and an end of a bird's beak is located on a side surface of each trench and is connected to the oxide film formed in each trench.

REFERENCES:
patent: 4688064 (1987-08-01), Ogura et al.
patent: 4819054 (1989-04-01), Kawaji et al.
IEDM 84: "Trench Capacitor Leakage in MBIT DRAMS", by M. Elahy et al., 9.6, 1984, pp. 248-251.

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