Optoelectronic integrated circuit

Coherent light generators – Particular component circuitry – Optical pumping

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357 40, 357 17, 357 34, 372 50, H01L 2702

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active

049566822

ABSTRACT:
An optoelectronic integrated circuit includes an N.sup.+ type cladding layer, an N type cladding layer, an active layer smaller in band gap than the N type cladding layer and a P type waveguide greater in band gap than the active layer sequentially formed on a semi-insulating substrate, a P type cladding layer partially formed on the surface of the P type waveguide, a laser composed of these N.sup.+ type and N type cladding layers, active layer, waveguide and P type cladding layer, and an N type emitted layer wider in band gap than the P type waveguide formed partially on the surface of the P type waveguide, thereby composing a heterojunction bipolar transistor using the N type cladding layer as the collector and the P type waveguide as the base.

REFERENCES:
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patent: 4786951 (1988-11-01), Tokuda et al.
patent: 4801993 (1989-01-01), Ankri et al.
patent: 4835579 (1989-05-01), Ishibashi et al.
Katz et al., "A Monolithic Integration of GaAs/GaAlAs Bipolar transistor and Heterostructure Laser", Jul. 15, 1980, Applied Physics Letters, 37, pp. 211-213.
"Monolithic Integration of LD/HBTs on a Semi-Insulating InP Substrate", Ohnaka et al.; Transactions on the Institute of Electronics, Information and Communication Engineers, vol. J71-C, No. 5, pp. 748-754.
Applied Physics Letters, pp. 191-193, vol. 45 (published 1984).

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