Semiconductor device

Details Semiconductor device Semiconductor device

1983-03-08

1985-06-11

Edlow, Martin H.

357 49, H01L 2712

Patent

active

045232113

ABSTRACT:
A semiconductor device having multi-layered structure is disclosed. The semiconductor device comprises a first semiconductor layer, a second semiconductor layer, a beryllium oxide (BeO) film for insulating between the first and second semiconductor layers, wherein at least one of the semiconductor layers is grown on the BeO film to be regulated by the crystalline structure of the beryllium oxide.

REFERENCES:
patent: 3743552 (1973-07-01), Fa
patent: 3792525 (1974-02-01), McKinnon
patent: 3997381 (1976-12-01), Wanlass
patent: 4106045 (1978-08-01), Nishi
patent: 4381201 (1983-02-01), Sakyrai

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