Static information storage and retrieval – Floating gate – Particular biasing
Patent
1995-04-27
1996-12-24
Yoo, Do Hyun
Static information storage and retrieval
Floating gate
Particular biasing
365168, 365184, 36518503, G11C 1300
Patent
active
055879497
ABSTRACT:
Multiple logic levels can be simultaneously programmed into any combination of memory cells in a column of an ETOX array by applying one of a corresponding number of programming voltages to the word lines that correspond with the cells to be programmed. In the present invention, the memory cells in the array form a punchthrough current during programming which, in turn, leads to the formation of an increased number of substrate hot electrons. By utilizing the substrate hot electrons formed from the punchthrough current in addition to the channel hot electrons, much lower control gate voltages can be utilized during programming.
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Bergemont Albert
Chi Min-hwa
National Semiconductor Corporation
Yoo Do Hyun
LandOfFree
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