Multiple-valued mask programmable read only memory semiconductor

Details Multiple-valued mask programmable read only memory semiconductor Multiple-valued mask programmable read only memory semiconductor

1998-06-30

2000-04-11

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

Particular biasing

36518909, 365 94, 365203, G11C 1600

Patent

active

060494816

ABSTRACT:
A word level generator in a multiple-valued mask programmable read only memory semiconductor device having a plurality of kinds of mask programmable read only memory cells having a plurality of distributions in number of the mask programmable read only memory cells versus variation of actual threshold voltages from predetermined threshold voltages. The distributions are separated from each other and do not overlap each other. The word level generator generates a word level which is between a maximum voltage level of lower one of adjacent two of the distributions and a minimum voltage level of higher one of the adjacent two of the distributions, so that all of the mask programmable read only memory cells are permitted to show correct ON/OFF operations for application of different word level voltages, whereby only correct data are obtained from the multiple-valued mask programmable read only memory semiconductor device.

REFERENCES:
patent: 5572462 (1996-11-01), Lee
patent: 5751632 (1998-05-01), Choi et al.
patent: 5818757 (1998-11-01), So et al.

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