Electric lamp and discharge devices: systems – Plural power supplies – Plural cathode and/or anode load device
Patent
1995-04-21
1996-12-24
Pascal, Robert
Electric lamp and discharge devices: systems
Plural power supplies
Plural cathode and/or anode load device
3151694, 313351, G09G 300
Patent
active
055876285
ABSTRACT:
A field emission device including a substrate, an emitter layer, a spacer layer and a gate layer. In one preferred embodiment, the emitter layer is made of a resistive material, and has a side end that has an edge. The spacer layer is on and over only a portion of the emitter layer to expose the edge. The gate layer, on the spacer layer, also has a side end that is tapered to form a wedge with an edge. In one application, the device is used in a flat panel display, with a screen. The screen is at a selected positive voltage and is positioned above the gate layer. When a selected potential difference is applied between the emitter layer and the gate layer, an electron-extraction field is established between the edge of the gate layer and the edge of the emitter layer to extract electrons from the edge of the emitter layer. Then, the electrons are attracted to the screen. The wedge reduces the amount of electrons collected at the gate and increases the efficiency of the device. The resistive nature of the emitter layer enhances the uniformity of the electrons emitted along the edge of the emitter layer.
REFERENCES:
patent: 3753022 (1973-08-01), Fraser, Jr.
patent: 5266155 (1993-11-01), Gray
patent: 5463269 (1995-10-01), Zimmerman
Gray, Henry F.; "High Current Density Silicon FEAs", Technical Digestof IVMC 91, Nagahama 1991, pp. 30-31. No Month.
C. A. Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg; "Physical Properties of Thin-film Field Emission Cathodes with Molybdenum Cones", Stanford Research Institute, Jul. 15, 1976.
Nureki, Chizuru and Araragi, Muneki; "Planar Field Emission Devices with Three-Dimensional Gate Structures", Technical Digest of IVMC 91, Nagahama 1991. No Month.
Pascal Robert
Vu David H.
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