Ion implanting apparatus and ion implanting method

Details Ion implanting apparatus and ion implanting method Ion implanting apparatus and ion implanting method

1994-08-04

1996-12-24

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250397, 250251, H01J 37317, H01J 37304

Patent

active

055875874

ABSTRACT:
An ion implanting apparatus for irradiating a material, for example, a semiconductor wafer, with an ion beam generated at an ion source, for implanting the ion into the material, is provided with a magnet at a side of the material opposite to a side into which the ion is irradiated. Thereby, the implantation is performed without charging thereon and with a high yielding ratio.

REFERENCES:
patent: 4135097 (1979-01-01), Formeris et al.
patent: 4463255 (1984-07-01), Robertson et al.
patent: 4675530 (1987-06-01), Rose et al.
patent: 5072125 (1991-12-01), Nakanishi et al.
patent: 5354986 (1994-10-01), Yamada et al.
Patent Abstracts Of Japan, vol. 16, No. 204 (E-1202), May 15, 1992 & JP-A04 033 246 (Ricoh Co Ltd), Feb. 4, 1992.
Patent Abstracts Of Japan, vol. 18, No. 290 (E-1557), Jun. 2, 1994 & JP-A-06 061 166 (Nissin Electric Co Ltd), Mar. 4, 1994.

Affiliated with

Also associated with

Rating

Ion implanting apparatus and ion implanting method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implanting apparatus and ion implanting method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implanting apparatus and ion implanting method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1180307