Light absorbing layer for II-VI semiconductor light emitting dev

Details Light absorbing layer for II-VI semiconductor light emitting dev Light absorbing layer for II-VI semiconductor light emitting dev

1997-08-25

1999-10-05

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, 257 94, 257103, H01S 319, H01L 3300

Patent

active

059635738

ABSTRACT:
A II-VI semiconductor light emitting device includes a II-VI semiconductor light emitting region and a II-VI semiconductor waveguide layer. A light absorbing layer is provided near the II-VI semiconductor waveguide layer, outside of the active region. The light absorbing layer absorbs extraneous radiation thereby reducing dark line defects (DLDs).

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