Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1984-01-09
1985-06-11
Kaplan, G. L.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
204192C, 204192P, 428432, 428698, 428913, C23C 1500
Patent
active
045224692
ABSTRACT:
An improved photosensor film and liquid crystal light valves embodying said film is provided. The photosensor film and liquid crystal light valve is characterized by a significant lower image retention time while maintaining acceptable photosensitivity. The photosensor film is produced by sputter depositing CdS onto an ITO substrate in an atmosphere of aqrgon/H.sub.2 S gas while maintaining the substrate at a temperature in the range of about 130.degree. C. to about 200.degree. C. and while introducing nitrogen gas into the system to the extent of not more than about 1% of plasma mixture. Following sputter deposition of the CdS, the film is annealed in an inert gas at temperatures ranging from about 300.degree. C. to about 425.degree. C.
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S. R. Jost, A New Light-Modulated Liquid-Crystal Light Valve, J. Appl. Phys., vol. 49, No. 10, Oct. 1978, pp. 5332-5333.
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Thin Solid Films, "Sputter-Deposited Films for Display Devices," Author-D. B. Fraser, May 1972, pp. 407-412.
Proceedings, 2nd European Community, Photovoltaic Solar Energy Conference, "Preparation and Properties of Nitrogen-Doped Amorphous Silicon," Author-Hack et al., 1979, pp. 278-286.
Kaplan G. L.
Leader William T.
Manning John R.
Matthews Marvin F.
Schlorff Russell E.
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