Multiquantum barrier Schottky junction device

Details Multiquantum barrier Schottky junction device Multiquantum barrier Schottky junction device

1995-04-17

1998-08-04

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 17, 257 18, 257189, 257190, H01L 2906, H01L 310328

Patent

active

057897603

ABSTRACT:
There is provided a semiconductor device comprising a Schottky junction having a very low leakage current and a high forward voltage. The device comprises a Schottky junction realized by a semiconductor 4 and a metal 6 and a multiquantum barrier structure 5 disposed on the interface of said semiconductor 4 and said metal 6 and having an effect of reflecting enhancement of the incident and reflected waves!.

REFERENCES:
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patent: 5053843 (1991-10-01), Choudhury et al.
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patent: 5105248 (1992-04-01), Burke et al.
patent: 5208695 (1993-05-01), Dutta
Fritz et al., "Novel reflectance modulator employing an InGaAs/AlGaAs strained layer super lattice Fabry-Perot cavity with unstrained InGaAs/InAlAs mirrors", Appl. Phys. Lett. vol. 58, No. 15, 15 Apr. 1991.
Iga, K. et al. Electron. Lett. vol. 22, 1008 (1986).
Morgan, D.V. et al. Electron. Lett. vol. 14, 737 (1978).

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