Reliable HEMT with small parasitic resistance

Details Reliable HEMT with small parasitic resistance Reliable HEMT with small parasitic resistance

1995-07-24

2000-04-11

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257201, 257615, H01L 31328

Patent

active

060490977

ABSTRACT:
In an N-channel HEMT, a channel layer having an electron affinity .chi..sub.1, a spacer layer having an electron affinity .chi..sub.2, and an electron supply layer having an electron affinity .chi..sub.3 smaller than the electron affinity .chi..sub.1 and larger than the electron affinity .chi..sub.2 are laminated in this sequence. Both the channel layer and the electron supply layer include indium (In), and a percentage composition of indium in the channel layer is larger than a percentage composition of indium in the electron supply layer.

REFERENCES:
patent: 4967242 (1990-10-01), Sonoda et al.
patent: 5250822 (1993-10-01), Sonoda et al.
patent: 5285087 (1994-02-01), Narita et al.
patent: 5473177 (1995-12-01), Nakajima
patent: 5488237 (1996-01-01), Kuwata
patent: 5521404 (1996-05-01), Kikkawa et al.
patent: 5677553 (1997-10-01), Yamamoto et al.
A. Ketterson et al., "High Transconductance In GaAs/ AlGaAs Pseudomoriphic Modulation-Doped Field-Effect Transistors," IEEE Electron Device Letters, vol. EDL-6, No. 12, pp. 628-630, Dec. 1985.

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