Method of forming a electrode structure for ferroelectric capaci

Details Method of forming a electrode structure for ferroelectric capaci Method of forming a electrode structure for ferroelectric capaci

1996-10-10

1998-08-04

Tsai, Jey

Fishing, trapping, and vermin destroying

437 52, 437919, H01L 2170, H01L 2700

Patent

active

057892687

ABSTRACT:
An improved electrode structure compatible with ferroelectric capacitor dielectrics is provided. In particular, a multilayer electrode having improved adhesion to ferroelectric materials such as PZT is formed comprising a first layer of a noble metal, a second layer of another metal and a thicker layer of the noble metal, which are annealed to cause controlled interdiffusion of the layers forming a mixed metal surface layer having a rough interface with the dielectric layer. For example, the first two layers comprise relatively thin .about.200 .ANG. layers of Pt and Ti, and then a thicker layer of the main, first, electrode material is deposited on top. Non-uniform interdiffusion of the layers during annealing causes intermixing of the Pt and Ti layers at the interfaces forming a Pt/Ti alloy having a rough surface. The rough surface, and particularly hillocks formed at the interface, penetrate into the ferroelectric films, and anchor the electrode material to the dielectric. Improved adhesion of the conductive electrode material improves integrity of this interface during subsequent processing.

REFERENCES:
patent: 5005102 (1991-04-01), Larson
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5393352 (1995-02-01), Summerfelt

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