Method of manufacturing a high density magnetic memory device

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438171, 438210, 438131, H01L 2100

Patent

active

060487399

ABSTRACT:
A high density magnetic memory device and method of manufacture therefor, wherein the magnetic bit region is provided after selected higher temperature processing steps are performed. Illustrative higher temperature processing steps include those that are performed above for example 400.degree. C., any may include contact and via plug processing. The present invention may allow, for example, contact and via plug processing to be used to form magnetic RAM devices. As indicated above, contact and/or via plug processing typically allows the size of the contacts and vias to be reduced, and the packing density of the resulting memory device to be increased.

REFERENCES:
patent: 3816909 (1974-06-01), Maeda et al.
patent: 3947831 (1976-03-01), Kobayashi et al.
patent: 4044330 (1977-08-01), Johnson et al.
patent: 4060794 (1977-11-01), Feldman et al.
patent: 4158891 (1979-06-01), Fisher
patent: 4455626 (1984-06-01), Lutes
patent: 4731757 (1988-03-01), Daughton et al.
patent: 4780848 (1988-10-01), Daughton et al.
patent: 5039655 (1991-08-01), Pisharody
patent: 5064499 (1991-11-01), Fryer
patent: 5140549 (1992-08-01), Fryer
patent: 5496759 (1996-03-01), Yue et al.
patent: 5547599 (1996-08-01), Wolfrey et al.
patent: 5569617 (1996-10-01), Yeh et al.
patent: 5861328 (1999-01-01), Tehrani et al.
Pohm et al., "The Architecture of a High Performance Mass Store with GMR Memory Cells", IEEE Trans on Mag., vol. 31, No. 6., Nov. 1995.
Pohm et al., "Experimental and Analytical Properties of 0.2 Micron Wide, Multi-Layer, GMR, Memory Elements", IEEE Trans. on Mag., vol. 32, No. 5, Sep. 1996.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing a high density magnetic memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a high density magnetic memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a high density magnetic memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1175762

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.