Method of manufacturing RF power semiconductor package

Details Method of manufacturing RF power semiconductor package Method of manufacturing RF power semiconductor package

1978-04-06

1981-01-27

Husar, Francis S.

Metal working

Method of mechanical manufacture

Electrical device making

29832, 29574, 29589, 29576S, H01R 4302, H05K 334

Patent

active

042466970

ABSTRACT:
High frequency power transistor carriers are made by bonding a metalized ceramic base to a lead frame strip, subsequently gold plating the resultant structure and then cutting the lead frame strip to isolate the base and collector leads while still maintaining the transistor carriers in strip form. Transistor dice are then attached to each ceramic carrier, and each transistor carrier in the strip is then electrically tested. The individual carriers are then separated from the lead frame strip. The individual carrier has wide base and collector leads extending outward from the ceramic base for a substantial distance and then the base and collector leads are narrowed down. When the individual transistor carrier is used in combination with a hybrid assembly, a reduction in lead inductance and total hybrid package size is obtained while exact carrier placement relative to the hybrid assembly is not required.

REFERENCES:
patent: 3520054 (1970-07-01), Pensack et al.
patent: 3544857 (1970-12-01), Byrne et al.
patent: 3549782 (1970-12-01), Reifel
patent: 3691289 (1972-09-01), Rohloff
patent: 3698074 (1972-10-01), Helda et al.
patent: 3713066 (1973-01-01), Fisher et al.
patent: 3729820 (1973-05-01), Ihochi et al.
patent: 3864727 (1975-02-01), Schoberl
patent: 3872583 (1975-03-01), Beall et al.
patent: 3902148 (1975-08-01), Drees et al.

Affiliated with

Also associated with

Rating

Method of manufacturing RF power semiconductor package does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing RF power semiconductor package, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing RF power semiconductor package will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1174604