Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1988-10-06

1990-02-13

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 44, 357 4, 357 17, 357 60, H01S 319

Patent

active

049013262

ABSTRACT:
A semiconductor laser device of this invention comprises a plurality of semiconductor epitaxial layers grown on a semiconductor substrate, wherein the growth plane of said substrate is substantially the (111) plane.

REFERENCES:
Patent Abstracts of Japan, vol. 7, No. 292, E-219, 1437, 27 Dec. 1983.
Patent Abstracts of Japan, vol. 5, No. 40, E-49, 712, 17 Mar. 1981.
Sanada et al., (1987) Applied Physics Letters 51(14): 1054-1056.
U.S. patent application Ser. No. 07/031,678 (filing date: Mar. 30, 1987), 16 pages.
Japanese Journal of Applied Physics, vol. 27, No. 3, Mar. 1988, pp. L300-L303.
Physical Review B Condensed Matter, vol. 38, No. 2, 15 Jul. 1988, pp. 1526-1528.
Japanese Journal of Applied Physics, vol. 27, No. 5, May 1988, pp. L762-L765.
Division of Chemistry of Functional Dyes, Kinki Chemical Society, Japan, Aug. 1, 1988.
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Journal of Applied Physics, vol. 64, No. 1, 1 Jul. 1988, pp. 297-302.
Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Aug. 25-27, 1987, Tokyo, Japan, pp. 103-106.
Appl. Phys. Lett. 52(5), 1 Feb. 1988, pp. 339-341.
Appl. Phys. Lett., vol. 51, No. 21, 23 Nov. 1987, pp. 1704-1707.
Physical Review Letters, vol. 60, No. 4, 25 Jan. 1988, pp. 349-352.
Journal of Applied Physics, vol. 64, No. 5, 1 Sep. 1988, pp. 2764-2766.
Japanese Journal of Applied Physics, vol. 26, No. 4, Apr. 1987, pp. L302-L305.

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