Inverter apparatus having improved switching element

Details Inverter apparatus having improved switching element Inverter apparatus having improved switching element

1997-07-01

1999-10-05

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257147, 257133, H01L 2974, H01L 31111

Patent

active

059628774

ABSTRACT:
An inverter with an improved semiconductor device is provided having a pn junction composed of a first semiconductor layer made of a first conductivity type semiconductor and a second semiconductor layer made of a second conductivity type semiconductor having a wider band-gap than that of the first semiconductor layer.

REFERENCES:
patent: 4716515 (1987-12-01), Alexander
patent: 5202750 (1993-04-01), Gough

Affiliated with

Also associated with

Rating

Inverter apparatus having improved switching element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Inverter apparatus having improved switching element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Inverter apparatus having improved switching element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1174395