Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1998-04-06
1999-10-05
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257146, 257173, 257174, H01L 2974, H01L 31111
Patent
active
059628766
ABSTRACT:
An electrostatic discharge protection circuit comprises a semiconductor layer of a first conductivity type, a floating semiconductor layer of a second conductivity type, a first doped region of the first conductivity type, a first doped region of the second conductivity type, a second doped region of the second conductivity type, a gate structure, and a second doped region of the first conductivity type. The floating semiconductor layer of a second conductivity type is in contact with the semiconductor layer of a first conductivity type to establish a junction therebetween. The first doped region of the first conductivity type is formed in the semiconductor layer of a second conductivity type and connected to a first node. The first doped region of the second conductivity type is formed in the semiconductor layer of a first conductivity type and connected to a second node. The second doped region of the second conductivity type spans the junction. The gate structure overlies a portion of the semiconductor layer of a first conductivity type between those doped regions of the second conductivity type. The second doped region of the first conductivity type is formed in the semiconductor layer of a first conductivity type and connected to the second node. The second doped region of the second conductivity type will break down to trigger the conduction of a discharge current flowing through the junction when electrostatic discharge stress occurs between the first node and the second node.
REFERENCES:
patent: 5465189 (1995-11-01), Polgreen
patent: 5576557 (1996-11-01), Ker et al.
McGraw-Hill Dictionary of Scientific and Technical Terms, 5.sup.th Ed, 5 Ed, p. 774.
Ngo Ngan V.
Winbond Electronics Corporation
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