Method of implanting low doses of ions into a substrate

Details Method of implanting low doses of ions into a substrate Method of implanting low doses of ions into a substrate

1997-07-10

1999-10-05

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

H01J 37317

Patent

active

059628588

ABSTRACT:
The present invention provides for an ion implantation system that employs an ion source for ionizing and implanting into a substrate a noble diluent gas and a particular dopant gas. The noble diluent gas of the present invention preferably does not react with the dopant gas, or with dopant residue which coats the walls of the ionization chamber of the ion source, thus allowing the ion source to be used for accurate, stable low dose implants. Additionally, the noble diluent gas does not introduce conductivity altering ions, or impurities, into the substrate S. Consequently, the dosage of the dopant ions implanted into the substrate can be precisely controlled, especially in low dose applications.

REFERENCES:
patent: 3916034 (1975-10-01), Tsuchimoto
patent: 3924134 (1975-12-01), Uman et al.
patent: 4775818 (1988-10-01), Clark, Jr. et al.
patent: 4881010 (1989-11-01), Jetter
patent: 4988640 (1991-01-01), Bohling et al.
patent: 5558718 (1996-09-01), Leung

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