Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-11-30
1998-08-04
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 94, 117 95, 117929, C30B 2905
Patent
active
057887667
ABSTRACT:
A window material, which has a high thermal conductivity material layer having a thermal conductivity of at least 10 W/cm.multidot.K and which has a cooling medium flow path on or in the high thermal conductivity material layer, has a high heat-dissipating property and a high transmittance.
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Fujimori Naoji
Harano Katsuko
Ota Nobuhiro
Tanabe Keiichiro
Tsuno Takashi
Kunemund Robert
Sumitomo Electric Industries Ltd.
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