Electronic apparatus having semiconductor device

Electricity: electrical systems and devices – Safety and protection of systems and devices – With specific current responsive fault sensor

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357 74, 357 72, 361417, 228123, H01L 2302

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active

049011375

ABSTRACT:
Disclosed is an electronic apparatus wherein a large power consumption type semiconductor device is mounted on a ceramic substrate of sintered aluminum nitride with high thermal conductivity for improving a heat dissipation effect. The electronic apparatus is, for example, an ignitor. The aluminum nitride-made ceramic substrate having the semiconductor device is provided in a metallic vessel made of aluminum or the like. Employed is a thermal stress strain-resistant adhesive agent with high thermal conductivity such as a silicone type adhesive agent for bonding. The thermal stress strain-resistant adhesive agent layer serves as a cushioning layer for a heating and cooling cycle and therefore improves a heat cycle resistance.

REFERENCES:
patent: 4540673 (1985-09-01), Takeda et al.
patent: 4770953 (1988-09-01), Horiguchi et al.
Kurokawa et al., "Highly Thermal Conductive Aluminum Nitride Substrate", 298 NEC Research & Development, Apr. 1987, No. 85, pp. 15-21.

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