Transition metal clad interconnect for integrated circuits

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357 65, 357 71, 357 71S, H01L 2348

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049807528

ABSTRACT:
An integrated circuit includes a patterned aluminum based interconnect clad on the top and side portions with a layer of transition metal. The cladding of transition metal prevents the formation of both vertical hillocks and lateral protrusions. Preventing these formations increases the reliability of an interconnect by significantly reducing passivation cracking and electrical shorting between interconnects which result from vertical hillock and lateral protrusion formations.

REFERENCES:
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patent: 4527184 (1985-07-01), Fischer
IBM Technical Disclosure Bulletin, vol. 13, No. 5, Oct. 1970, "Silver Metallurgy for Semiconductor Device", by F. M. Pressman and A. J. Rideout.
Electronics and Optics, Thin Solid Films, 96(182), p. 327-345, "The Use of Titanium Based Contact Barrier Layers in Si Technology".
Materials Letters, vol. 4, No. 5, 6, 7, Jul. 1986, "Microstructures and Properties of AlSi-Ti Multilayer Structure", by Nahar.
IBM Technical Disclosure Bulletin, vol. 26, No. 9, Feb. 1984, pp. 4492-4493.
6046 materials Letters 4(1986), Jul., No. 5/6/7, Amsterdam, Netherlands, pp. 264-267.

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