Turn-off thyristor

Details Turn-off thyristor Turn-off thyristor

1989-04-10

1990-12-25

Hille, Rolf

357 39, H01L 2974, H01L 29747

Patent

active

049807420

ABSTRACT:
A turn-off thyristor whereby an n-base layer not contacted by a gate electrode has at least one thin semiconductor layer inserted into it that is oppositely doped. Its distance from a pn-junction between a p-base and the n-base is selected so small that the maximum field strength of the space charge zone building up at this pn-junction upon turn-off of the thyristor is limited to a non-critical value at which an avalanche breakdown with respect to the charge carriers to be cleared out does not yet occur.

REFERENCES:
patent: 4171995 (1979-10-01), Nishizawa et al.
patent: 4224634 (1980-09-01), Svedberg
patent: 4517582 (1985-05-01), Sittig
Katz, Margalit, Yariv; Electrical Properties of Multip--n Junction Devices; 1982 IEEE, pp. 977-984.
"Electrical Properties of Multi P--N Junction Devices", by Joseph Katz et al., IEEE Transactions On Electron Devices, vol. ed--29; No. 6, Jun., 1982, pp. 977-984.

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