Method for pulling a single crystal

Details Method for pulling a single crystal Method for pulling a single crystal

1997-02-20

1999-10-05

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 14, 117 15, C30B 1522

Patent

active

059617152

ABSTRACT:
A method and apparatus for pulling a single crystal by, for example, the Czochralski method where a melt is heated by heaters arranged around, or around and below a crucible. Auxiliary heaters are provided above the crucible to directly heat the melt to supplement the heaters arranged around, or around and below the crucible, so as to reduce the power of the heaters arranged around, or around and below the crucible. According to the method, a single crystal is pulled under the condition of the local highest temperature of a quartz crucible of 1600.degree. C. or less.

REFERENCES:
patent: 4058429 (1977-11-01), Duncan et al.
patent: 4421721 (1983-12-01), Byer et al.
patent: 4597949 (1986-07-01), Jasinski et al.
patent: 5137699 (1992-08-01), Azad
patent: 5223077 (1993-06-01), Kaneko et al.

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