Photosensitive device of the type with amplification of the sign

Details Photosensitive device of the type with amplification of the sign Photosensitive device of the type with amplification of the sign

1989-10-23

1990-12-25

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

250211J, 357 30, H01J 4014

Patent

active

049805460

ABSTRACT:
Disclosed is a solid state photosensitive device having photosensitive dots, each of which achieves an amplification of the useful signal by means of a transistor obtained by a technology enabling the making photosensitive devices with large areas. To this end, according to the disclosure, each photosensitive diode has at least one photosensitive element that generates electrical charges stored at a point at floating potential, and has a transistor, the control gate of which is connected to the floating point. The transistor thus fulfils an amplifier function, but does not fulfill a photodetection function, so that it can be made of amorphous silicon, amorphous silicon being a material that can be used in thin layers or thin films on large areas.

REFERENCES:
patent: 4808822 (1989-02-01), Manning et al.
Patent Abstracts of Japan, vol. 7, No. 162, (E-187) (1307), Jul. 15, 1983, & JP-A-58 68 966, K. Hatanaka, "Photoelectric Transducer".

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