Planar Trapatt diode

Details Planar Trapatt diode Planar Trapatt diode

Filed on

1974-12-05

Date issued

1976-11-02

Examiner

Wojciechowicz, Edward J.

Other Related Categories

357 51, 357 55, 357 59, 357 90, H01L 2990, H01L 2702, H01L 2904, H01L 2906

Type

Patent

Status

active

Patent number

039900991

Description

ABSTRACT:
A planar TRAPATT diode includes a substrate selected from an area of a silicon wafer, a diffused region within the area, a mask of an insulating layer of SiO.sub.2, and a conductive layer of polycrystalline silicon. The silicon wafer includes a doped P region adjacent to the surface thereof and a heavily doped P.sup.+ region adjacent to the P region. The TRAPATT junction is a selected area below the surface at the interface between the diffused region, which is N.sup.+, and the P region. The polycrystalline silicon layer is the dopant source for the N.sup.+ diffused region and contacts the wafer in the selected area.

REFERENCES:
patent: 3600649 (1971-08-01), Liu et al.
patent: 3663874 (1972-05-01), Fukukawa et al.
patent: 3743967 (1973-07-01), Fitzsimmons et al.
patent: 3909119 (1975-09-01), Wolley

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