1974-04-12
1976-11-02
Lynch, Michael J.
357 68, 357 86, H01L 2974
Patent
active
039900908
ABSTRACT:
A semiconductor controlled rectifier comprising a semiconductor substrate of four-layer structure consisting of alternate P and N layers; a pair of main electrodes kept in ohmic contact with the exposed surfaces of outermost P and N layers; a gate electrode kept in contact with the surface of an intermediate layer; and an auxiliary electrode disposed on the surface of the intermediate layer, which is separated from the gate electrode, lies opposite to the main electrode with respect to the gate electrode, and has a portion located near the main electrode.
REFERENCES:
patent: 3360696 (1967-12-01), Neilson et al.
patent: 3428874 (1969-02-01), Gerlach
patent: 3462620 (1969-08-01), Weinstein
patent: 3526815 (1970-09-01), Svedberg et al.
patent: 3543105 (1970-11-01), Svedberg et al.
patent: 3566211 (1971-02-01), Svedberg
patent: 3670217 (1972-06-01), Boksjo et al.
patent: 3725753 (1973-04-01), Garrett
patent: 3836994 (1974-09-01), Piccone et al.
patent: 3914783 (1975-10-01), Terasawa
patent: 3943548 (1976-03-01), Terasawa
Kimura Shin
Terasawa Yoshio
Clawson Jr. Joseph E.
Hitachi , Ltd.
Lynch Michael J.
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