Semiconductor controlled rectifier

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 68, 357 86, H01L 2974

Patent

active

039900908

ABSTRACT:
A semiconductor controlled rectifier comprising a semiconductor substrate of four-layer structure consisting of alternate P and N layers; a pair of main electrodes kept in ohmic contact with the exposed surfaces of outermost P and N layers; a gate electrode kept in contact with the surface of an intermediate layer; and an auxiliary electrode disposed on the surface of the intermediate layer, which is separated from the gate electrode, lies opposite to the main electrode with respect to the gate electrode, and has a portion located near the main electrode.

REFERENCES:
patent: 3360696 (1967-12-01), Neilson et al.
patent: 3428874 (1969-02-01), Gerlach
patent: 3462620 (1969-08-01), Weinstein
patent: 3526815 (1970-09-01), Svedberg et al.
patent: 3543105 (1970-11-01), Svedberg et al.
patent: 3566211 (1971-02-01), Svedberg
patent: 3670217 (1972-06-01), Boksjo et al.
patent: 3725753 (1973-04-01), Garrett
patent: 3836994 (1974-09-01), Piccone et al.
patent: 3914783 (1975-10-01), Terasawa
patent: 3943548 (1976-03-01), Terasawa

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor controlled rectifier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor controlled rectifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor controlled rectifier will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1163107

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.