Fishing – trapping – and vermin destroying
Patent
1989-08-30
1990-12-25
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
148DIG112, 148DIG114, 437235, 437242, H01L 21265
Patent
active
049803077
ABSTRACT:
An insulative film, such as SiO.sub.2, Si.sub.3 N.sub.4 and PSG films, for example, is commonly used the passivation film or gate electrode of MISFETs. Stability of the insulative films during the production or operation of the semiconductor devices is enhanced by providing an insulative film which is formed by nitridation, for example, in an NH.sub.3 gas, of an SiO.sub.2 film, preferably a directly thermally oxidized film of silicon. The insulative film according to the present invention is used for a gate insulation film in MISFETs, a capacitor or passivation film for semiconductor devices, and as a mask for selectively forming circuit elements of semiconductor devices. The process for forming the insulative film may comprise successive nitridation, oxidation and nitridation steps.
REFERENCES:
patent: 3385729 (1968-05-01), Larchian
patent: 3520722 (1970-07-01), Scott
patent: 3549411 (1970-12-01), Bean et al.
patent: 3789061 (1974-03-01), Yamazaki
patent: 3917495 (1975-11-01), Horn
patent: 3924024 (1975-12-01), Naber et al.
patent: 3967981 (1976-07-01), Yamazaki
patent: 4051273 (1977-09-01), Abbas et al.
patent: 4056642 (1977-11-01), Saxena et al.
patent: 4066037 (1978-01-01), Jacob
patent: 4113515 (1978-09-01), Kooi et al.
patent: 4238436 (1980-12-01), Hill et al.
patent: 4298629 (1981-11-01), Nozaki et al.
patent: 4331710 (1982-05-01), Nozaki et al.
patent: 4436770 (1984-03-01), Nishizawa et al.
Bassous, "Fabricating Submicrometer Silicon Devices", IBM TDB, vol. 15, No.6, Nov. 1972 pp. 1823-1825.
Ackermann et al., "Process for Deposition of Oxynitride", IBM TDB, vol. 15, No. 12, May 1973, p. 3888.
Kasprzak et al., "Pseudostable MNOS Structures", J. Electrochem. Soc. , vol. 124, No. 10, Oct. 1977, pp. 1631-1634.
Choudhari, "Threshold Voltage Degradation of MNOS FET Devices", J. Electrochem. Soc., vol. 125, No. 10, Oct. 1978 pp. 1657-1660.
Kooi et al., "Formation of Silicon Nitride at Si-SiO.sub.2 Interface .. . , " J. Electrochem. Soc., Jul. 1976, vol. 123, No. 7, pp. 1117-1120.
C. J. Dell'Oca, "Properties of Anodic Films Formed in the Anodization of Silicon Nitride," Journal of the Electrochronical Society, vol. 120, No. 9, pp. 1225-1230, Sep., 1973.
Myron J. Rand et al., "Silicon Oxynitride Films from the No-NH.sub.3 SiH.sub.4 Reaction," Journal of Electrochronical Society: Solid State Science and Technology, vol. 120, No. 3, pp. 446-453, Mar. 1973.
Takashi Ito et al., "Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia Gas," vol. 127, Journal of Electrochronical Society: Solid State Science and Technology, No. 9, pp. 2053-2057, Sep., 1980.
P. C. Li et al., "Gate Dielectric Strucuture for Field-Effect Transistors," IBM Technical Disclosure Bulletin, Jan., 1975, vol. 17, No. 8. p. 2330.
M. R. Poponiak et al., "Formation of Thick Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.z on Si Substrate by Anodnitridization," IBM Technical Disclosure Bulletin, Aug. 1976, vol. 19, No. 3, p. 905.
Judith A. Nemetz, "Thermal Nitridation of Silicon and Silicon Dioxide for Thin Gate Insulators," Solid State Technology, Feb. 1983, pp. 70-85.
F. H. P. M. Habraken et al., "Thermal Nitridation of Monocrystalline Silicon, Polycrystalline Silicon and Silicon Dioxide Films," Phillips Research Laboratories, 1983, vol. 38, pp. 19-25.
Ito Takashi
Nozaki Takao
Bunch William
Chaudhuri Olik
Fujitsu Limited
LandOfFree
Process for producing a semiconductor device having a silicon ox does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for producing a semiconductor device having a silicon ox, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing a semiconductor device having a silicon ox will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1162510