Method for reducing mobile ion contamination in semiconductor in

Details Method for reducing mobile ion contamination in semiconductor in Method for reducing mobile ion contamination in semiconductor in

1990-02-23

1990-12-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 62, 437190, H01L 21306

Patent

active

049803018

ABSTRACT:
In a method of fabricating semiconductor integrated circuits, the effects of mobile ion contamination in a dielectric layer which has been subjected to a source of mobile ion contamination, e.g., reactive ion etching, is substantially eliminated by removing substantially only the topmost portion of the dielectric layer, e.g., 10-15 nm of an 800 nm layer, promptly after performing the step which produced the source of contamination.

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patent: 4732865 (1988-03-01), Evans et al.
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patent: 4780431 (1988-10-01), Maggini et al.
patent: 4795722 (1989-01-01), Welch et al.
patent: 4810673 (1989-03-01), Freeman
VLSI Technology, Sze, S. editor; McGraw-Hill Book Co., N.Y. (1983), p. 336.

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