Thin film transistor having polycrystalline silicon layer with 0

Details Thin film transistor having polycrystalline silicon layer with 0 Thin film transistor having polycrystalline silicon layer with 0

1983-01-10

1986-11-25

Edlow, Martin H.

357 2, 357 4, 357 59, H01L 2978, H01L 2712, H01L 4902, H01L 2904

Patent

active

046252240

ABSTRACT:
A semiconductor element having a main part of a polycrystalline silicon semiconductor layer containing 0.01 to 5 atomic % of chlorine atoms.

REFERENCES:
patent: 4196438 (1980-04-01), Carlson
patent: 4239554 (1980-12-01), Yamazaki
patent: 4520380 (1985-05-01), Ovshinsky et al.
Kamins, "Hydrogenation of Transistors Fabricated in Polycrystalline-Silicon Films," IEEE Electron Device Letters, vol. EDL-1, No. 8, Aug. 1980.

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