VMOS/Bipolar dual-triggered switch

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307254, 307315, H03K 1704, H03K 1706, H03K 1760, H03K 17687

Patent

active

042861756

ABSTRACT:
A relatively high-power switching device and circuit includes a first VMOS transistor which is turned on for supplying via its channel a first current to the base electrode of a bipolar transistor, for turning on the latter into at least an unsaturated conduction state, thereafter a second VMOS transistor is turned on for supplying a second current concurrently with the first current to the base electrode of the bipolar transistor, causing the latter to go into or close to saturation as possible, depending upon the characterstics of the load, for minimizing the power dissipation thereof during a major period of its conductive state. The second VMOS transistor has its channel connected between the base and emitter electrodes of the bipolar transistor, whereby when the former is conductive, in addition to supplying the second current, it also provides negative feedback between the collector and base electrodes of the bipolar transistor, thereby enhancing the transient capability of the bipolar transistor. The bipolar transistor is turned off by first turning off the first VMOS transistor, ensuring the former is placed into a non-saturated conduction state, and thereafter the second VMOS transistor is turned off, reducing the base current to zero, causing the bipolar transistor to turn off. In this manner the turn-on and turn-off times for the bipolar transistor can be minimized.

REFERENCES:
patent: 3210561 (1965-10-01), Ullman
patent: 3553541 (1971-01-01), King
patent: 3879619 (1975-04-01), Pleshko
patent: 4123670 (1978-10-01), Pollmeier
patent: 4189641 (1980-02-01), Akamatsu
Barlage, "Switched Mode VMOS and Bipolar . . . ," Fifth National Solid-State Power Conversion Conf. (Powercon 5), Proceedings, Session D2, pp. D2-1 to D2-8, May 1978.

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