Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1992-01-23
1993-04-13
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 61, H01L 29784
Patent
active
052025721
ABSTRACT:
A thin-film transistor basically comprises an insulating substrate, a gate electrode formed on the substrate, a gate insulating layer covering the gate electrode, a semiconductor layer formed on the gate insulating layer, and source/drain electrodes electrically connected to the semiconductor layer. An insulating layer is interposed between the source/drain electrodes and the semiconductor layer, and the source/drain electrodes are electrically connected to the semiconductor layer through a pair of openings provided in the insulating layer. The connection to the semiconductor layer is made directly or via an electrical connection member.
REFERENCES:
patent: 4778773 (1988-10-01), Sukegawa
patent: 4788157 (1988-11-01), Nakamura
patent: 4821092 (1989-04-01), Noguchi
patent: 4905066 (1990-02-01), Dohjo et al.
Fuji 'Xerox Co., Ltd.
Larkins William D.
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