Imaging device having improved high temperature performance

Metal working – Method of mechanical manufacture – Assembling or joining

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313367, 357 31, 148DIG24, 148DIG60, 148DIG172, H01L 3118, H01L 2714

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045479577

ABSTRACT:
An imaging device includes a wafer of single crystal semiconductor material having a first surface with an input surfacing region which extends into the wafer from the first surface and a second surface with a charge storage portion which includes a plurality of discrete charge storing regions which extend into the wafer of the second surface. The wafer includes a potential barrier within the input signal sensing portion for controlling blooming. The wafer is improved by including a passivation region within the input sensing portion for stabilizing the energy level of the conductivity band of the minority carriers at the Fermi energy level of the semiconductor wafer. Additionally, an electrical leakage reduction region extends into the wafer from the second surface. The leakage reduction region is contiguous with each of the discrete charge storage regions.

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patent: 3883769 (1975-05-01), Finnila
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patent: 4021844 (1977-05-01), Gilles et al.
patent: 4232245 (1980-11-01), Savoye et al.
"Theory, Design, and Performance of Low-Blooming Silicon Diode Array Imaging Targets", by B. M. Singer et al., IEEE Transactions on Electron Devices, vol. ED-21, No. 1, Jan. 1974, pp. 84-89.
"Ion Implantation Basics", by E. C. Douglas et al., RCA Technical Report, PRRL-72-TR-100, Abstract and p. 24, Jun. 26, 1972.

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