Method for a two step selective deposition of refractory metals

Details Method for a two step selective deposition of refractory metals Method for a two step selective deposition of refractory metals

1992-01-06

1993-04-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437190, 437195, 148DIG25, H01L 2144, H01L 2148

Patent

active

052022870

ABSTRACT:
Selective deposition of a refractory metal on a silicon substrate utilizing high temperatures and a silane reduction process in which the flow rate ratio of silane to refractory metal halide gas is less than one. In a second embodiment, an additional layer of the refractory metal is deposited utilizing a hydrogen reduction of the metal halide gas at very high temperatures. In both embodiments, a refractory metal barrier layer may be provided by forming a self-aligned refractory metal silicide layer. Alternatively, a two layer self-aligned barrier is formed of a refractory metal silicide lower layer and a refractory metal nitride upper layer and the refractory metal is selectively deposited on the metal nitride.

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