Crystal growth method

Details Crystal growth method Crystal growth method

1990-09-27

1992-01-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437107, 437110, 437 81, 156610, 156613, H01L 2120

Patent

active

050827987

ABSTRACT:
A crystal growth method using an atomic layer epitaxial growth method for growing a III-V compound semiconductor by metal organic chemical deposition in which group III and group V elements are supplied independently including doping with a group IV element as an amphoteric impurity by alternatingly epitaxially growing one atomic layer including the group IV element and one of the group III and group V elements and epitaxially growing one atomic layer of the other of the group III and V elements.

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patent: 4845049 (1989-07-01), Sunakawa
patent: 4859627 (1989-08-01), Sunakawa
Razeghi et al., "Monolayer Epitaxy of III-V Compounds by Low-Pressure Metalorganic Chemical Vapor Dep.", Appl. Phys. Lett. 51(26), Dec. 28, 1987, pp. 2216-2218.
Mori et al., "GaAs Growth by Atomic Layer Epitaxy Using Diethylgalliumchloride," Appl. Phys. Lett. (1), Jan. 4, 1988, pp. 27-29.
Doi et al., "Stepwise Monolayer Growth of GaAs by Switched Laser Metalorganic Vapor Phase Epitaxy," Appl. Phys. Lett. 49 (13), Sep. 29, 1986, pp. 785-787.
Aoyagi et al., "Atomic-Layer Growth of GaAs by Modulated-Continuous Wave Laser Metalorganic Vapor Phase Epitaxy", J. Vac. Sci. Technol. B5(5); Sep./Oct. 1987, pp. 1460-1464.
Nishizawa, "Molecular Layer Epitaxy", Journal of the Electrochemical Society, vol. 132, No. 5, 1984, pp. 1197-1200.
Horikoshi et al., "Low-Temperature Growth . . . Beam Epitaxy", Japanese Journal of Applied Physics, vol. 25, No. 10, 1984, pp. L868-L870.

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