Forward body biased field effect transistor providing decoupling

Details Forward body biased field effect transistor providing decoupling Forward body biased field effect transistor providing decoupling

1998-05-13

2000-08-08

Kim, Jung Ho

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327537, G05F 110

Patent

active

06100751&

ABSTRACT:
In one embodiment of the invention, a semiconductor circuit includes a first group of field effect transistors that are forward body biased and have threshold voltages and a second group of field effect transistors that are not forward body biased and have threshold voltages that are higher than the threshold voltages of the first group of field transistors. In another embodiment of the invention, a semiconductor circuit includes first and second groups of field effect transistors. The circuit includes voltage source circuitry to provide voltage signals to bodies of the first group of field effect transistors to forward body bias the transistors of the first group. When the voltage signals are applied, the transistors of the first group have lower threshold voltages than do the transistors of the second group, except that there may be unintentional variations in threshold voltages due to parameter variations. Other aspects of the invention include forward biased decoupling transistors and a method of testing for leakage.

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