Photoconductive member of a-silicon with nitrogen

Details Photoconductive member of a-silicon with nitrogen Photoconductive member of a-silicon with nitrogen

1981-12-29

1984-12-25

Martin, Roland E.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 57, 430 95, 427 74, 2525011, 357 2, G03G 5082, G03G 509

Patent

active

044904533

ABSTRACT:
A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containing nitrogen atoms in at least a part thereof, the content of the nitrogen atoms in said layer region being distributed unevenly in the direction of the thickness of said layer.

REFERENCES:
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4251289 (1981-02-01), Moustakas et al.
patent: 4253882 (1981-03-01), Dalal
patent: 4265991 (1981-05-01), Hirai et al.

Affiliated with

Also associated with

Rating

Photoconductive member of a-silicon with nitrogen does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoconductive member of a-silicon with nitrogen, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoconductive member of a-silicon with nitrogen will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1153019