Semiconductor device and a method for making the same that provi

Details Semiconductor device and a method for making the same that provi Semiconductor device and a method for making the same that provi

1997-08-19

2000-08-08

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257763, 257786, H01L 2348, H01L 2352, H01L 2940

Patent

active

061005894

ABSTRACT:
A semiconductor device and a method for making the same that provide highly reliable and high density arrangement of a connecting region for an external connecting terminal, such as a bonding pad. Electrode layers are connected to each other through embedded conductive layers forming highly-superposed multi-layered structures without bumps. Openings are provided in a second electrode layer, a first insulating interlayer and a second insulating interlayer. The above layers are connected to each other through openings. A prop of the insulating interlayer film is formed between the third electrode layer and the first electrode layer. The props prevent cracks from forming in the insulating interlayers when a load is applied during wire-bonding.

REFERENCES:
patent: 5229642 (1993-07-01), Hara et al.
patent: 5751065 (1998-05-01), Chittipeddi et al.
patent: 5847466 (1998-12-01), Ito et al.

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