Modulation-doped field-effect transistors and fabrication proces

Details Modulation-doped field-effect transistors and fabrication proces Modulation-doped field-effect transistors and fabrication proces

1998-10-07

2000-08-08

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 28C, 257284, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

061005487

ABSTRACT:
A process is provided for fabricating MODFET's in group III nitride compound semiconductors. The process precedes isolation of the MODFET structure with the use of e-beam lithography to define very narrow (e.g., .about.0.25 micrometer) gates which enhance transistor microwave cut-off frequency. Because these compound semiconductors resist chemical etchants, isolation is accomplished by etching with reactive ions to form an isolation mesa having a vertical mesa sidewall. To improve breakdown, the mesa sidewall is covered with a passivation layer prior to deposition of a gate feed that contacts the gate. To reduce parasitic gate capacitance, the gate feed is spaced from a narrow edge of the transistor's two-dimensional electron gas.

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